Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

Keyphrases

• Annealing Temperature 100%
• ZnO Thin Films 100%
• Dual Ion Beam Sputtering 100%
• ZnO Film 80%
• Room Temperature 40%
• Annealing 40%
• Emission Peak 40%
• Near-band-edge Emission 40%
• Deep-level Emission 40%
• X Ray Diffraction 20%
• Increased Temperature 20%
• Electrical Characterization 20%
• Structural Properties 20%
• Crystal Plane 20%
• Morphological Properties 20%
• Si (100) Substrate 20%
• Preferred Orientation 20%
• Electron Mobility 20%
• Spectroscopy Studies 20%
• Minimum Value 20%
• Photoluminescence Measurements 20%
• X-ray Photoelectron Spectroscopy 20%
• X-ray Diffraction Measurement 20%
• Oxygen Vacancy 20%
• Full Width at Half Maximum 20%
• Optoelectronic Properties 20%
• Device Fabrication 20%
• Depositional System 20%
• Good Quality 20%
• Oxygen Interstitials 20%
• Vacancy Point-defect 20%
• In-situ Annealing 20%
• P-type Si 20%
• Interstitial Point Defect 20%

Engineering

• Annealing Temperature 100%
• Thin Films 100%
• Band Edge 40%
• Deep Level 40%
• Peak Intensity 40%
• Room Temperature 40%
• Emission Peak 40%
• X Ray Diffraction 40%
• Ray Photoelectron Spectroscopy 20%
• Crystal Plane 20%
• Deposition System 20%
• Interstitial Oxygen 20%
• Optoelectronic Device 20%
• Preferred Orientation 20%
• Full width at half maximum 20%

Material Science

• ZnO 100%
• Thin Films 100%
• Film 66%
• X-Ray Diffraction 33%
• Annealing 33%
• Photoluminescence 16%
• X-Ray Photoelectron Spectroscopy 16%
• Device Fabrication 16%
• Diffraction Measurement 16%
• Morphology 16%
• Electron Mobility 16%
• Point Defect 16%