Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; Ashish Kumar; Uday P. Deshpande; Mukul Gupta; Shaibal Mukherjee

doi:10.1007/s12034-014-0035-0

Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

Sushil Kumar Pandey, Saurabh Kumar Pandey, Vishnu Awasthi, Ashish Kumar, Uday P. Deshpande, Mukul Gupta, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on p-type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ~ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm²/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

Original language	English (US)
Pages (from-to)	983-989
Number of pages	7
Journal	Bulletin of Materials Science
Volume	37
Issue number	5
DOIs	https://doi.org/10.1007/s12034-014-0035-0
State	Published - Aug 2014

Bibliographical note

Funding Information:
1Discipline of Electrical Engineering, Hybrid Nanodevice Research Group, Indian Institute of Technology, Indore 453 441, India 2Department of Atomic Energy (UGC DAE), Consortium for Scientific Research, University Grants Commission, Indore 452 001, India

Funding Information:
This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist no. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) project number SR/S3/EECE/0142/ 2011 and Council of Scientific and Industrial Research (CSIR) project number 22(0608)/12/EMR-II. We are also grateful to the atomic force microscopy (AFM) facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.

Keywords

DIBSD
In situ annealing
PL
XPS
XRD
ZnO

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@article{9ea3ee6b11fc4a12973f17bdff63d444,

title = "Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering",

abstract = "We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on p-type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ~ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.",

keywords = "DIBSD, In situ annealing, PL, XPS, XRD, ZnO",

author = "Pandey, {Sushil Kumar} and Pandey, {Saurabh Kumar} and Vishnu Awasthi and Ashish Kumar and Deshpande, {Uday P.} and Mukul Gupta and Shaibal Mukherjee",

note = "Funding Information: 1Discipline of Electrical Engineering, Hybrid Nanodevice Research Group, Indian Institute of Technology, Indore 453 441, India 2Department of Atomic Energy (UGC DAE), Consortium for Scientific Research, University Grants Commission, Indore 452 001, India Funding Information: This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist no. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) project number SR/S3/EECE/0142/ 2011 and Council of Scientific and Industrial Research (CSIR) project number 22(0608)/12/EMR-II. We are also grateful to the atomic force microscopy (AFM) facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.",

year = "2014",

month = aug,

doi = "10.1007/s12034-014-0035-0",

language = "English (US)",

volume = "37",

pages = "983--989",

journal = "Bulletin of Materials Science",

issn = "0250-4707",

publisher = "Indian Academy of Sciences",

number = "5",

}

TY - JOUR

T1 - Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

AU - Pandey, Sushil Kumar

AU - Pandey, Saurabh Kumar

AU - Awasthi, Vishnu

AU - Kumar, Ashish

AU - Deshpande, Uday P.

AU - Gupta, Mukul

AU - Mukherjee, Shaibal

N1 - Funding Information: 1Discipline of Electrical Engineering, Hybrid Nanodevice Research Group, Indian Institute of Technology, Indore 453 441, India 2Department of Atomic Energy (UGC DAE), Consortium for Scientific Research, University Grants Commission, Indore 452 001, India Funding Information: This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist no. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) project number SR/S3/EECE/0142/ 2011 and Council of Scientific and Industrial Research (CSIR) project number 22(0608)/12/EMR-II. We are also grateful to the atomic force microscopy (AFM) facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.

PY - 2014/8

Y1 - 2014/8

N2 - We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on p-type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ~ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

AB - We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on p-type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ~ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

KW - DIBSD

KW - In situ annealing

KW - PL

KW - XPS

KW - XRD

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84940222245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940222245&partnerID=8YFLogxK

U2 - 10.1007/s12034-014-0035-0

DO - 10.1007/s12034-014-0035-0

M3 - Article

AN - SCOPUS:84940222245

SN - 0250-4707

VL - 37

SP - 983

EP - 989

JO - Bulletin of Materials Science

JF - Bulletin of Materials Science

IS - 5

ER -

Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

Abstract

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Keywords

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