Indium-Doped Crystals of SnSe2

Danrui Ni; Xianghan Xu; Zheyi Zhu; Yasemin Ozbek; Vesna Mikšić Trontl; Chen Yang; Xiao Yang; Alex Louat; Cephise Cacho; N. P. Ong; Pengpeng Zhang; Tonica Valla; Robert J. Cava

doi:10.1021/acs.jpcc.4c02926

Indium-Doped Crystals of SnSe₂

Danrui Ni, Xianghan Xu, Zheyi Zhu, Yasemin Ozbek, Vesna Mikšić Trontl, Chen Yang, Xiao Yang, Alex Louat, Cephise Cacho, N. P. Ong, Pengpeng Zhang, Tonica Valla, Robert J. Cava

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Bulk crystals of undoped and In-doped (on the order of 1%) SnSe₂ were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe₂, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

Original language	English (US)
Pages (from-to)	11054-11062
Number of pages	9
Journal	Journal of Physical Chemistry C
Volume	128
Issue number	26
DOIs	https://doi.org/10.1021/acs.jpcc.4c02926
State	Published - Jul 4 2024
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2024 American Chemical Society.

Publisher link

10.1021/acs.jpcc.4c02926

Find It

Find It at U of M Libraries

Cite this

@article{b445bba267b24225a7fde8cdedd4b66c,

title = "Indium-Doped Crystals of SnSe2",

abstract = "Bulk crystals of undoped and In-doped (on the order of 1%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.",

author = "Danrui Ni and Xianghan Xu and Zheyi Zhu and Yasemin Ozbek and {Mik{\v s}i{\'c} Trontl}, Vesna and Chen Yang and Xiao Yang and Alex Louat and Cephise Cacho and Ong, {N. P.} and Pengpeng Zhang and Tonica Valla and Cava, {Robert J.}",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

month = jul,

day = "4",

doi = "10.1021/acs.jpcc.4c02926",

language = "English (US)",

volume = "128",

pages = "11054--11062",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "26",

}

TY - JOUR

T1 - Indium-Doped Crystals of SnSe2

AU - Ni, Danrui

AU - Xu, Xianghan

AU - Zhu, Zheyi

AU - Ozbek, Yasemin

AU - Mikšić Trontl, Vesna

AU - Yang, Chen

AU - Yang, Xiao

AU - Louat, Alex

AU - Cacho, Cephise

AU - Ong, N. P.

AU - Zhang, Pengpeng

AU - Valla, Tonica

AU - Cava, Robert J.

PY - 2024/7/4

Y1 - 2024/7/4

N2 - Bulk crystals of undoped and In-doped (on the order of 1%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

AB - Bulk crystals of undoped and In-doped (on the order of 1%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

UR - http://www.scopus.com/inward/record.url?scp=85196620027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85196620027&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.4c02926

DO - 10.1021/acs.jpcc.4c02926

M3 - Article

AN - SCOPUS:85196620027

SN - 1932-7447

VL - 128

SP - 11054

EP - 11062

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 26

ER -