Indirect transitions in thin films due to the coulomb interactions between electrons

E. M. Kazaryan, K. A. Mkhoyan, H. A. Sarkisyan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The absorption coefficient in the indirect transitions due to the Coulomb interactions between electrons in thin size-quantized semiconductor film has been calculated. The calculation has been carried out for the case of high density of electrons and small transfer of momentum ℏ→q, when the light absorption is connected with emission of plasmons. The frequency dependence as well as dependence on the concentration of conductivity electrons and thickness of the film has been obtained.

Original languageEnglish (US)
Pages (from-to)185-187
Number of pages3
JournalThin Solid Films
Volume338
Issue number1-2
DOIs
StatePublished - Jan 11 1999

Keywords

  • Gallium phosphate
  • Optical properties
  • Quantum effects
  • Semiconductors

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