Abstract
The absorption coefficient in the indirect transitions due to the Coulomb interactions between electrons in thin size-quantized semiconductor film has been calculated. The calculation has been carried out for the case of high density of electrons and small transfer of momentum ℏ→q, when the light absorption is connected with emission of plasmons. The frequency dependence as well as dependence on the concentration of conductivity electrons and thickness of the film has been obtained.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 185-187 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 338 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Jan 11 1999 |
Keywords
- Gallium phosphate
- Optical properties
- Quantum effects
- Semiconductors