Indirect transitions caused by electron-dislocation interaction in size-quantized semiconductor film

E. M. Kazaryan, K. A. Mkhoyan, H. A. Sarkisyan

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The light absorbtion coefficient of a semiconductor film caused by indirect electronic transitions is calculated under the assumption that the part of the third body plays a dislocation. There is obtained the frequency dependence of the absorbtion coefficient at various orientations of dislocations in the film. The comparison is carried out of the suggested mechanism with known mechanisms of indirect transitions.

Original languageEnglish (US)
Pages (from-to)54-57
Number of pages4
JournalThin Solid Films
Volume302
Issue number1-2
DOIs
StatePublished - Jun 20 1997

Keywords

  • Germanium
  • Optical properties
  • Quantum effects
  • Semiconductors

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