Indirect transitions caused by electron-dislocation interaction in size-quantized semiconductor film

E. M. Kazaryan; K. A. Mkhoyan; H. A. Sarkisyan

doi:10.1016/S0040-6090(96)09572-7

Indirect transitions caused by electron-dislocation interaction in size-quantized semiconductor film

E. M. Kazaryan, K. A. Mkhoyan, H. A. Sarkisyan

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The light absorbtion coefficient of a semiconductor film caused by indirect electronic transitions is calculated under the assumption that the part of the third body plays a dislocation. There is obtained the frequency dependence of the absorbtion coefficient at various orientations of dislocations in the film. The comparison is carried out of the suggested mechanism with known mechanisms of indirect transitions.

Original language	English (US)
Pages (from-to)	54-57
Number of pages	4
Journal	Thin Solid Films
Volume	302
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09572-7
State	Published - Jun 20 1997

Keywords

Germanium
Optical properties
Quantum effects
Semiconductors

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10.1016/S0040-6090(96)09572-7

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abstract = "The light absorbtion coefficient of a semiconductor film caused by indirect electronic transitions is calculated under the assumption that the part of the third body plays a dislocation. There is obtained the frequency dependence of the absorbtion coefficient at various orientations of dislocations in the film. The comparison is carried out of the suggested mechanism with known mechanisms of indirect transitions.",

keywords = "Germanium, Optical properties, Quantum effects, Semiconductors",

author = "Kazaryan, {E. M.} and Mkhoyan, {K. A.} and Sarkisyan, {H. A.}",

year = "1997",

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AU - Kazaryan, E. M.

AU - Mkhoyan, K. A.

AU - Sarkisyan, H. A.

PY - 1997/6/20

Y1 - 1997/6/20

N2 - The light absorbtion coefficient of a semiconductor film caused by indirect electronic transitions is calculated under the assumption that the part of the third body plays a dislocation. There is obtained the frequency dependence of the absorbtion coefficient at various orientations of dislocations in the film. The comparison is carried out of the suggested mechanism with known mechanisms of indirect transitions.

AB - The light absorbtion coefficient of a semiconductor film caused by indirect electronic transitions is calculated under the assumption that the part of the third body plays a dislocation. There is obtained the frequency dependence of the absorbtion coefficient at various orientations of dislocations in the film. The comparison is carried out of the suggested mechanism with known mechanisms of indirect transitions.

KW - Germanium

KW - Optical properties

KW - Quantum effects

KW - Semiconductors

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DO - 10.1016/S0040-6090(96)09572-7

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SP - 54

EP - 57

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Indirect transitions caused by electron-dislocation interaction in size-quantized semiconductor film

Abstract

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