Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

É M. Kazaryan; K. A. Mkhoyan

doi:10.1134/1.1187404

Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

É M. Kazaryan
, K. A. Mkhoyan

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.

Original language	English (US)
Pages (from-to)	404-405
Number of pages	2
Journal	Semiconductors
Volume	32
Issue number	4
DOIs	https://doi.org/10.1134/1.1187404
State	Published - Apr 1998

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title = "Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field",

abstract = "The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.",

author = "Kazaryan, \{{\'E} M.\} and Mkhoyan, \{K. A.\}",

year = "1998",

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N2 - The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.

AB - The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.

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Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

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