Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

É M. Kazaryan, K. A. Mkhoyan

Research output: Contribution to journalArticle

Abstract

The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.

Original languageEnglish (US)
Pages (from-to)404-405
Number of pages2
JournalSemiconductors
Volume32
Issue number4
DOIs
StatePublished - Apr 1998

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