Increased refractive indices in rare earth doped InP and In 0.53Ga 0.47As thin films

B. J H Stadler, J. P. Lorenzo

Research output: Contribution to journalConference article

Abstract

Rare earth (Gd, Eu, Er) doped InGaAs and InP layers were grown by liquid phase epitaxy (LPE). The refractive index of these layers was observed to increase with the addition of the rare earth ions. The observed increase could not be explained by changes in host composition as typically calculated from changes in lattice parameter. In fact, the refractive index was seen to increase (≈0.25) by an order of magnitude more than would be expected by the change in the lattice parameter (≈0.02). The increased refractive indices of InP layers due to Er-doping enabled waveguiding. These findings suggest that optically active waveguide devices can be fabricated from semiconducting hosts by simple rare earth doping.

Original languageEnglish (US)
Pages (from-to)357-362
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume422
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Fingerprint

Rare earths
Refractive index
rare earth elements
refractivity
Thin films
Lattice constants
lattice parameters
thin films
Doping (additives)
Liquid phase epitaxy
liquid phase epitaxy
Waveguides
Ions
waveguides
Chemical analysis
ions

Cite this

Increased refractive indices in rare earth doped InP and In 0.53Ga 0.47As thin films. / Stadler, B. J H; Lorenzo, J. P.

In: Materials Research Society Symposium - Proceedings, Vol. 422, 01.12.1996, p. 357-362.

Research output: Contribution to journalConference article

@article{3522b555fa7246988596826c5f385c0b,
title = "Increased refractive indices in rare earth doped InP and In 0.53Ga 0.47As thin films",
abstract = "Rare earth (Gd, Eu, Er) doped InGaAs and InP layers were grown by liquid phase epitaxy (LPE). The refractive index of these layers was observed to increase with the addition of the rare earth ions. The observed increase could not be explained by changes in host composition as typically calculated from changes in lattice parameter. In fact, the refractive index was seen to increase (≈0.25) by an order of magnitude more than would be expected by the change in the lattice parameter (≈0.02). The increased refractive indices of InP layers due to Er-doping enabled waveguiding. These findings suggest that optically active waveguide devices can be fabricated from semiconducting hosts by simple rare earth doping.",
author = "Stadler, {B. J H} and Lorenzo, {J. P.}",
year = "1996",
month = "12",
day = "1",
language = "English (US)",
volume = "422",
pages = "357--362",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Increased refractive indices in rare earth doped InP and In 0.53Ga 0.47As thin films

AU - Stadler, B. J H

AU - Lorenzo, J. P.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Rare earth (Gd, Eu, Er) doped InGaAs and InP layers were grown by liquid phase epitaxy (LPE). The refractive index of these layers was observed to increase with the addition of the rare earth ions. The observed increase could not be explained by changes in host composition as typically calculated from changes in lattice parameter. In fact, the refractive index was seen to increase (≈0.25) by an order of magnitude more than would be expected by the change in the lattice parameter (≈0.02). The increased refractive indices of InP layers due to Er-doping enabled waveguiding. These findings suggest that optically active waveguide devices can be fabricated from semiconducting hosts by simple rare earth doping.

AB - Rare earth (Gd, Eu, Er) doped InGaAs and InP layers were grown by liquid phase epitaxy (LPE). The refractive index of these layers was observed to increase with the addition of the rare earth ions. The observed increase could not be explained by changes in host composition as typically calculated from changes in lattice parameter. In fact, the refractive index was seen to increase (≈0.25) by an order of magnitude more than would be expected by the change in the lattice parameter (≈0.02). The increased refractive indices of InP layers due to Er-doping enabled waveguiding. These findings suggest that optically active waveguide devices can be fabricated from semiconducting hosts by simple rare earth doping.

UR - http://www.scopus.com/inward/record.url?scp=0030389038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030389038&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030389038

VL - 422

SP - 357

EP - 362

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -