Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm

Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I _ON /I _OFF ratio reached 10 ⁴ . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.