Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm

Yanfeng Jiang, Wenjie Wang, Zirui Wang, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I ON /I OFF ratio reached 10 4 . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.

Original languageEnglish (US)
Article number127
JournalMicromachines
Volume10
Issue number2
DOIs
StatePublished - Feb 15 2019

Bibliographical note

Funding Information:
Funding: This work was funded by the National Science Foundation of China (NSFC) Contract No.61774078.

Publisher Copyright:
© 2019 by the authors.

Keywords

  • Doping incorporation
  • Plasma-aided molecular beam epitaxy (MBE)
  • Segregation
  • Silicon nanowire

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