Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I ON /I OFF ratio reached 10 4 . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.
Bibliographical noteFunding Information:
Funding: This work was funded by the National Science Foundation of China (NSFC) Contract No.61774078.
© 2019 by the authors.
- Doping incorporation
- Plasma-aided molecular beam epitaxy (MBE)
- Silicon nanowire