Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm

Yanfeng Jiang; Wenjie Wang; Zirui Wang; Jian Ping Wang

doi:10.3390/mi10020127

Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm

Yanfeng Jiang, Wenjie Wang, Zirui Wang, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I _ON /I _OFF ratio reached 10 ⁴ . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.

Original language	English (US)
Article number	127
Journal	Micromachines
Volume	10
Issue number	2
DOIs	https://doi.org/10.3390/mi10020127
State	Published - Feb 15 2019

Bibliographical note

Funding Information:
Funding: This work was funded by the National Science Foundation of China (NSFC) Contract No.61774078.

Publisher Copyright:
© 2019 by the authors.

Keywords

Doping incorporation
Plasma-aided molecular beam epitaxy (MBE)
Segregation
Silicon nanowire

PubMed: MeSH publication types

Journal Article

Publisher link

10.3390/mi10020127

Find It

Find It at U of M Libraries

Cite this

@article{6cf2a886c1f9451ca77cc45b118ffe65,

title = "Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm",

abstract = " Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I ON /I OFF ratio reached 10 4 . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.",

keywords = "Doping incorporation, Plasma-aided molecular beam epitaxy (MBE), Segregation, Silicon nanowire",

author = "Yanfeng Jiang and Wenjie Wang and Zirui Wang and Wang, {Jian Ping}",

note = "Funding Information: Funding: This work was funded by the National Science Foundation of China (NSFC) Contract No.61774078. Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = feb,

day = "15",

doi = "10.3390/mi10020127",

language = "English (US)",

volume = "10",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "2",

}

TY - JOUR

T1 - Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm

AU - Jiang, Yanfeng

AU - Wang, Wenjie

AU - Wang, Zirui

AU - Wang, Jian Ping

PY - 2019/2/15

Y1 - 2019/2/15

N2 - Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I ON /I OFF ratio reached 10 4 . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.

AB - Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device's I ON /I OFF ratio reached 10 4 . The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.

KW - Doping incorporation

KW - Plasma-aided molecular beam epitaxy (MBE)

KW - Segregation

KW - Silicon nanowire

UR - http://www.scopus.com/inward/record.url?scp=85061604943&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061604943&partnerID=8YFLogxK

U2 - 10.3390/mi10020127

DO - 10.3390/mi10020127

M3 - Article

C2 - 30769928

AN - SCOPUS:85061604943

SN - 2072-666X

VL - 10

JO - Micromachines

JF - Micromachines

IS - 2

M1 - 127

ER -

Incorporation of phosphorus impurities in a silicon nanowire transistor with a diameter of 5 nm

Abstract

Bibliographical note

Keywords

PubMed: MeSH publication types

Publisher link

Find It

Other files and links

Fingerprint

Cite this