In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors

Fulin Xiong, Eric Ganz, Jene A. Golovchenko, Frans Spaepen

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

High energy ion scattering (HEIS) has been used for in situ surface and interface studies of molecular beam epitaxial growth of metals and semiconductors on semiconductors. In the study of phase transitions during the initial growth and thermal desorption of Pb on Si(111), HEIS measurement has directly and accurately determined the metal overlayer coverage associated with various surface structures and clearly revealed SiPb interface relaxation and Pb island formation. These results contribute to an unambiguous interpretation of LEED patterns and STM images. HEIS has been used to monitor the homoepitaxial growth of Ge on Ge(111) through liquid metal media, and to characterize in situ the grown thin films. This leads to a better understanding of the growth mechanism and optimal growth conditions.

Original languageEnglish (US)
Pages (from-to)780-784
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume56-57
Issue numberPART 2
DOIs
StatePublished - May 1 1991

Bibliographical note

Funding Information:
This work is supported in part by the National Science Foundation (DMR-8920490) and the Office of

Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.

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