TY - JOUR
T1 - In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors
AU - Xiong, Fulin
AU - Ganz, Eric
AU - Golovchenko, Jene A.
AU - Spaepen, Frans
N1 - Funding Information:
This work is supported in part by the National Science Foundation (DMR-8920490) and the Office of
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1991/5/1
Y1 - 1991/5/1
N2 - High energy ion scattering (HEIS) has been used for in situ surface and interface studies of molecular beam epitaxial growth of metals and semiconductors on semiconductors. In the study of phase transitions during the initial growth and thermal desorption of Pb on Si(111), HEIS measurement has directly and accurately determined the metal overlayer coverage associated with various surface structures and clearly revealed SiPb interface relaxation and Pb island formation. These results contribute to an unambiguous interpretation of LEED patterns and STM images. HEIS has been used to monitor the homoepitaxial growth of Ge on Ge(111) through liquid metal media, and to characterize in situ the grown thin films. This leads to a better understanding of the growth mechanism and optimal growth conditions.
AB - High energy ion scattering (HEIS) has been used for in situ surface and interface studies of molecular beam epitaxial growth of metals and semiconductors on semiconductors. In the study of phase transitions during the initial growth and thermal desorption of Pb on Si(111), HEIS measurement has directly and accurately determined the metal overlayer coverage associated with various surface structures and clearly revealed SiPb interface relaxation and Pb island formation. These results contribute to an unambiguous interpretation of LEED patterns and STM images. HEIS has been used to monitor the homoepitaxial growth of Ge on Ge(111) through liquid metal media, and to characterize in situ the grown thin films. This leads to a better understanding of the growth mechanism and optimal growth conditions.
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U2 - 10.1016/0168-583X(91)95026-A
DO - 10.1016/0168-583X(91)95026-A
M3 - Article
AN - SCOPUS:4944264382
SN - 0168-583X
VL - 56-57
SP - 780
EP - 784
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - PART 2
ER -