In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

W. M M Kessels, Denise C. Marra, M. C M Van De Sanden, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

A recently developed method to determine the surface hydride composition on plasma deposited a-Si:H by means of in situ attenuated total reflection infrared spectroscopy was studied in detail. The determination of the surface composition in terms of mono-, di-, and trihydrides on the basis of data available for hydrogenated c-Si surfaces was addressed and the quantification of the hydrogen surface coverage by using data from ideally hydrogen terminated c-Si surfaces and from bulk a-Si:H was highlighted. In addition, the method of Ar ion bombardment was compared with other techniques using isotope substitution. The resulting data was analyzed in detail.

Original languageEnglish (US)
Pages (from-to)781-789
Number of pages9
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
StatePublished - May 2002

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