In situ monitoring of etching uniformity in plasma reactors

Demetre Economou, Eray S. Aydil, Gabe Barna

Research output: Contribution to specialist publicationArticle

24 Scopus citations


A spatially resolved optical emission spectroscopy technique was applied to measure etchant concentration profiles in parallel plate plasma reactors. Also, multichannel laser interferometry was used to measure etching uniformity during plasma processing.

Original languageEnglish (US)
Number of pages5
Specialist publicationSolid State Technology
StatePublished - Apr 1 1991

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