Abstract
A spatially resolved optical emission spectroscopy technique was applied to measure etchant concentration profiles in parallel plate plasma reactors. Also, multichannel laser interferometry was used to measure etching uniformity during plasma processing.
| Original language | English (US) |
|---|---|
| Pages | 107-111 |
| Number of pages | 5 |
| Volume | 34 |
| No | 4 |
| Specialist publication | Solid State Technology |
| State | Published - Apr 1991 |