In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

Keyphrases

• Plasma Reactor 100%
• In Situ Measurements 100%
• Etch Yield 100%
• Incidence Angle Dependence 100%
• Ion Incidence Angle 100%
• Etching Rate 75%
• Plasma Etching 50%
• In Situ 25%
• Binary Mixture 25%
• Distance Function 25%
• Gas Mixture 25%
• Scanning Electron Micrograph 25%
• Si Etching 25%
• Feature Profiles 25%
• Plasma Mixture 25%
• Wet Plasma 25%
• Plasma Condition 25%
• Isotropic Plasma 25%

Physics

• In Situ Measurement 100%
• Plasma Etching 100%
• Binary Mixture 50%
• Gas Mixture 50%

Material Science

• Plasma Etching 100%
• Binary Mixture 50%
• Gas Mixture 50%