In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

Rodolfo Jun Belen, Sergi Gomez, Mark Kiehlbauch, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The authors propose and demonstrate a technique to determine the ion incidence angle dependence of the ion-enhanced etching yield under realistic plasma conditions and in situ in an arbitrary plasma reactor. The technique is based on measuring the etch rate as a function of position along the walls of features that initially have nearly semicircular cross sections. These initial feature shapes can be easily obtained by wet or isotropic plasma etching of holes patterned through a mask. The etch rate as a function of distance along the feature profile provides the etching yield as a function of the ion incidence angle. The etch rates are measured by comparing digitized scanning electron micrograph cross sections of the features before and after plasma etching in gas mixtures of interest. The authors have applied this technique to measure the ion incidence angle dependence of the Si etching yield in HBr, Cl2, S F6, and N F3 plasmas and binary mixtures of S F6 and N F3 with O2. Advantages and limitations of this method are also discussed.

Original languageEnglish (US)
Article number036606JVA
Pages (from-to)2176-2186
Number of pages11
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number6
DOIs
StatePublished - 2006

Bibliographical note

Funding Information:
This work was funded by the University of California Discovery Program Grants (Nos. SM01-10079 and ele03-10156) and by Lam Research Corporation and Lam Research Foundation. The authors wish to acknowledge the valuable technical help of Ricky Marsh, Denise Gavello, Shyam Ramalingan, and David Cooperberg of Lam Research Corporation.

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