In situ manufacture of magnetic tunnel junctions by a direct-write process

Barry N. Costanzi; Anastasia V. Riazanova; E. Dan Dahlberg; Lyubov M. Belova

doi:10.1063/1.4880728

In situ manufacture of magnetic tunnel junctions by a direct-write process

Barry N. Costanzi
, Anastasia V. Riazanova
, E. Dan Dahlberg
, Lyubov M. Belova

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In situ construction of Co/SiO₂/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

Original language	English (US)
Article number	222401
Journal	Applied Physics Letters
Volume	104
Issue number	22
DOIs	https://doi.org/10.1063/1.4880728
State	Published - Jun 2 2014

Publisher link

10.1063/1.4880728

Find It

Find It at U of M Libraries

Cite this

@article{8a33904746634f36963f7cee9975b6cd,

title = "In situ manufacture of magnetic tunnel junctions by a direct-write process",

abstract = "In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.",

author = "Costanzi, \{Barry N.\} and Riazanova, \{Anastasia V.\} and Dahlberg, \{E. Dan\} and Belova, \{Lyubov M.\}",

year = "2014",

month = jun,

day = "2",

doi = "10.1063/1.4880728",

language = "English (US)",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - In situ manufacture of magnetic tunnel junctions by a direct-write process

AU - Costanzi, Barry N.

AU - Riazanova, Anastasia V.

AU - Dahlberg, E. Dan

AU - Belova, Lyubov M.

PY - 2014/6/2

Y1 - 2014/6/2

N2 - In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

AB - In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

UR - https://www.scopus.com/pages/publications/84902456016

UR - https://www.scopus.com/pages/publications/84902456016#tab=citedBy

U2 - 10.1063/1.4880728

DO - 10.1063/1.4880728

M3 - Article

AN - SCOPUS:84902456016

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222401

ER -

In situ manufacture of magnetic tunnel junctions by a direct-write process

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this