In situ manufacture of magnetic tunnel junctions by a direct-write process

Barry N. Costanzi; Anastasia V. Riazanova; E. Dan Dahlberg; Lyubov M. Belova

doi:10.1063/1.4880728

In situ manufacture of magnetic tunnel junctions by a direct-write process

Barry N. Costanzi, Anastasia V. Riazanova, E. Dan Dahlberg, Lyubov M. Belova

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In situ construction of Co/SiO₂/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

Original language	English (US)
Article number	222401
Journal	Applied Physics Letters
Volume	104
Issue number	22
DOIs	https://doi.org/10.1063/1.4880728
State	Published - Jun 2 2014

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abstract = "In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.",

author = "Costanzi, {Barry N.} and Riazanova, {Anastasia V.} and Dahlberg, {E. Dan} and Belova, {Lyubov M.}",

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AU - Costanzi, Barry N.

AU - Riazanova, Anastasia V.

AU - Dahlberg, E. Dan

AU - Belova, Lyubov M.

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Y1 - 2014/6/2

N2 - In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

AB - In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

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In situ manufacture of magnetic tunnel junctions by a direct-write process

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