In situ manufacture of magnetic tunnel junctions by a direct-write process

Barry N. Costanzi, Anastasia V. Riazanova, E D Dahlberg, Lyubov M. Belova

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

Original languageEnglish (US)
Article number222401
JournalApplied Physics Letters
Volume104
Issue number22
DOIs
StatePublished - Jun 2 2014

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