In situ imaging of μN load indents into GaAs

E. T. Lilleodden, J. Nelson, W. W. Gerberich

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

Nanomechanical devices constitute an important and growing field, as they allow for new understanding of the mechanical properties at interfaces and surfaces. As an example, a newly developed nanoindentation device has been used to accomplish μN load indents into GaAs. First, it is shown that a plastic zone can be measured and is comparable to theory. Also, it is shown that the rate of indentation affects both the depth and upset zone of low load indents, implying a strain-rate sensitivity effect at room temperature. This is reinforced by observation of what appears to be a glide-based relaxation process.

Original languageEnglish (US)
Pages (from-to)2162-2165
Number of pages4
JournalJournal of Materials Research
Volume10
Issue number9
DOIs
StatePublished - Sep 1995

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