In situ growth of DyBa2Cu3O7-x thin films by molecular beam epitaxy

B. R. Johnson; K. M. Beauchamp; T. Wang; J. X. Liu; K. A. McGreer; J. C. Wan; M. Tuominen; Y. J. Zhang; M. L. Mecartney; A. M. Goldman

doi:10.1063/1.103225

In situ growth of DyBa₂Cu₃O_7-x thin films by molecular beam epitaxy

B. R. Johnson, K. M. Beauchamp, T. Wang, J. X. Liu, K. A. McGreer, J. C. Wan, M. Tuominen, Y. J. Zhang, M. L. Mecartney, A. M. Goldman

Materials Research Science & Engineering Center

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51 Scopus citations

Abstract

Films of DyBa₂Cu₃O_7-x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO₃(100), SrTiO₃(110), LaAlO ₃(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.

Original language	English (US)
Pages (from-to)	1911-1913
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	19
DOIs	https://doi.org/10.1063/1.103225
State	Published - 1990

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title = "In situ growth of DyBa2Cu3O7-x thin films by molecular beam epitaxy",

abstract = "Films of DyBa2Cu3O7-x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 {\AA} have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO 3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.",

author = "Johnson, {B. R.} and Beauchamp, {K. M.} and T. Wang and Liu, {J. X.} and McGreer, {K. A.} and Wan, {J. C.} and M. Tuominen and Zhang, {Y. J.} and Mecartney, {M. L.} and Goldman, {A. M.}",

year = "1990",

doi = "10.1063/1.103225",

language = "English (US)",

volume = "56",

pages = "1911--1913",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - In situ growth of DyBa2Cu3O7-x thin films by molecular beam epitaxy

AU - Johnson, B. R.

AU - Beauchamp, K. M.

AU - Wang, T.

AU - Liu, J. X.

AU - McGreer, K. A.

AU - Wan, J. C.

AU - Tuominen, M.

AU - Zhang, Y. J.

AU - Mecartney, M. L.

AU - Goldman, A. M.

PY - 1990

Y1 - 1990

N2 - Films of DyBa2Cu3O7-x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO 3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.

AB - Films of DyBa2Cu3O7-x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO 3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.

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DO - 10.1063/1.103225

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

In situ growth of DyBa₂Cu₃O_7-x thin films by molecular beam epitaxy

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