In situ growth of DyBa2Cu3O7-x thin films by molecular beam epitaxy

B. R. Johnson, K. M. Beauchamp, T. Wang, J. X. Liu, K. A. McGreer, J. C. Wan, M. Tuominen, Y. J. Zhang, M. L. Mecartney, A. M. Goldman

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Abstract

Films of DyBa2Cu3O7-x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO 3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.

Original languageEnglish (US)
Pages (from-to)1911-1913
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number19
DOIs
StatePublished - 1990

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