In-plane magnetic anisotropy in RF sputtered Fe-N thin films

H. B. Nie, S. Y. Xu, C. K. Ong, Q. Zhan, D. X. Li, J. P. Wang

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N) films showed a basic bcc α-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the α-Fe grains and inducing uniaxial anisotropy.

Original languageEnglish (US)
Pages (from-to)35-40
Number of pages6
JournalThin Solid Films
Volume440
Issue number1-2
DOIs
StatePublished - Sep 1 2003

Keywords

  • Directional order
  • Iron
  • Magnetic anisotropy
  • Nitrides

Fingerprint

Dive into the research topics of 'In-plane magnetic anisotropy in RF sputtered Fe-N thin films'. Together they form a unique fingerprint.

Cite this