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The fabrication of in-plane 2H-1T′ MoTe2 homojunctions by the flux-controlled, phase-engineering of few-layer MoTe2 from Mo nanoislands is reported. The phase of few-layer MoTe2 is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe2 is formed with high Te flux, while few-layer 1T′ MoTe2 is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T′ MoTe2 homojunctions are synthesized. As-synthesized MoTe2 is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T′ MoTe2 homojunctions have abrupt interfaces between 2H and 1T′ MoTe2 domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal–semiconductor junctions in MoTe2 in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal–semiconductor junctions for next-generation electronic and optoelectronic devices.
Bibliographical noteFunding Information:
J.E.J. and Y.Y. acknowledge the donors of the American Chemical Society Petroleum Research Fund (55709-DNI5) for funding and support of this research. S.J.K. and Y.S. were supported by the Defense Threat Reduction Agency Basic Research Award no. HDTRA1-14-1-0042. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which has received capital equipment funding from the National Science Foundation through the MRSEC program under Award Number DMR-1420013.
- 2D materials
How much support was provided by MRSEC?
Reporting period for MRSEC
- Period 4
PubMed: MeSH publication types
- Journal Article