In-flight dry etching of plasma-synthesized silicon nanocrystals

X. D. Pi, R. W. Liptak, S. A. Campbell, U. Kortshagen

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C F4 -based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by Si H4 -based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of C F4 -based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly ∼100 h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.

Original languageEnglish (US)
Article number083112
JournalApplied Physics Letters
Issue number8
StatePublished - 2007

Bibliographical note

Funding Information:
This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302, and partially by SPAWAR and NSF under Grant No. DMI-0556163. Portions of this work were carried out in the Characterization Facility which was partially supported through the NSF NNIN program.


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