Impurity conductivity in low compensated semiconductors

A. L. Efros, B. I. Shklovskii, I. Y. Yanchev

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

A theory of the temperature and concentration dependence of the impurity conduction in low compensated semiconductors is presented. For the activation energy the expression ε3 = 0.99 (e2/x)N D1/3 (1 − 0.43 v K1/4) is derived, where ND is the majority impurity concentration, K is the degree of compensation, and v is a numerical factor whose value is likely to be about 0.7. This expression essentially differs from the well known result of Miller and Abrahams. It is shown that the above dependence isin good agreement with available experimental data.

Original languageEnglish (US)
Pages (from-to)45-52
Number of pages8
Journalphysica status solidi (b)
Volume50
Issue number1
DOIs
StatePublished - Mar 1 1972

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