Impurity band structure in lightly doped semiconductors

A. L. Efros, Van Lien Nguyen Van Lien, B. I. Shklovskii

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The density of states and the position of the Fermi level in the impurity band at zero temperature have been studied by Monte Carlo computer simulation over a wide range of degrees of compensation. The impurity concentration is thought to be so small that the electron states of the impurity band are localised. The density of states has a soft Coulomb gap in the vicinity of the Fermi level, and its behaviour in this region is shown to have a universal character. In the cases of extremely small and extremely close compensation the simulation results agree with the theoretical ones obtained earlier. The increase in the activation energy epsilon 1 of the band conductivity at high degrees of compensation is computed and agrees with the experimental results. However, the computed value of hopping conductivity activation energy epsilon 3 is four times as large as the experimental one.

Original languageEnglish (US)
Article number018
Pages (from-to)1869-1881
Number of pages13
JournalJournal of Physics C: Solid State Physics
Issue number10
StatePublished - Dec 1 1979


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