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By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (-90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga2O3 using high-field magnetotransport measurements.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Feb 15 2021|
Bibliographical noteFunding Information:
This work was supported primarily by the National Science Foundation through the University of Minnesota MRSEC under Award No. DMR-2011401. Part of this work was supported through the Air Force Office of Scientific Research (AFOSR) through Grant No. FA9550-19-1-0245 and through No. DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which was supported by the National Science Foundation (NSF) through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-1542202. Part of this work was also carried out in the College of Science and Engineering Characterization Facility, University of Minnesota, which received capital equipment funding from the NSF through the UMN MRSEC program. Thin film synthesis work at the University of Utah was supported primarily by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0507 monitored by Dr. Ali Sayir. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States Air Force. Material synthesis effort at the University of Utah also acknowledges support from the National Science Foundation (NSF) under Award No. DMR-1931652. Part of this work was performed at the Utah Nanofab sponsored by the College of Engineering and the Office of the Vice President for Research.
© 2021 Author(s).
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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)
9/1/20 → 8/31/26
Project: Research project
IRG-1: Ionic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Greven, M., Jalan, B., Mkhoyan, A., Walter, J. & Wang, X.
9/1/20 → …
Project: Research project