Improving reliability of non-volatile memory technologies through circuit level techniques and error control coding

Keyphrases

• Spin-transfer Torque Magnetic RAM (STT-MRAM) 100%
• Error Control Coding 100%
• Increased Reliability 100%
• Circuit Level Techniques 100%
• Phase-change RAM 100%
• Nonvolatile Memory Technologies 100%
• Failure Rate 75%
• Block Failure 75%
• Circuit Level 50%
• Coding Scheme 50%
• Multilevel Cell 50%
• High Storage Density 50%
• Product Codes 50%
• Rate of Increase 25%
• Process Variation 25%
• Pulse Width 25%
• Error Model 25%
• Scalable Technology 25%
• Encoding Method 25%
• Width Adjustment 25%
• Memory Operations 25%
• Causes of Error 25%
• Voltage Boosting 25%
• Reliable Memory 25%
• Coding Error 25%
• Nonvolatile Resistive Memory 25%
• Raw Bit Error Rate 25%
• Device Geometry 25%
• Low Standby Power 25%
• Resistance Tuning 25%
• Resistance Drift 25%

Computer Science

• Level Technique 100%
• Non-Volatile Memory 100%
• Memory Technology 100%
• Error Control Coding 100%
• Nonvolatile 25%
• Process Variation 25%
• Coding Technique 25%
• Memory Operation 25%
• Resistive Memory 25%
• High Technology 25%

Engineering

• Nonvolatile Memory 100%
• Reliability Availability and Maintainability (Reliability Engineering) 100%
• Spin transfer torque 50%
• Failure Rate 37%
• Product Code 25%
• Multi-Level Cell 25%
• Coding Scheme 25%
• Resistive 12%
• Rate Increase 12%
• Promising Candidate 12%
• High Technology 12%
• Bit Error Rate 12%
• Pulse Duration 12%
• Process Variation 12%