Cu2ZnSn(SxSe1-x)4 (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu-Zn-Sn-S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (1 1 2) peak is systematically shifted to lower 2θ values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40-1.08 eV by varying the Se vaporization temperature.
Bibliographical noteFunding Information:
This work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant, which is funded by the Korea government Ministry of Knowledge Economy. (No.: 20124010203180 ). This work was partially supported by the National Research Foundation (NRF) of Korea ( 2014-R1A1A2009097 ).
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