Improved solar cell performance of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurizing stacked precursor thin films via SILAR method

M. P. Suryawanshi; Seung Wook Shin; U. V. Ghorpade; K. V. Gurav; C. W. Hong; P. S. Patil; A. V. Moholkar; Jin Hyeok Kim

doi:10.1016/j.jallcom.2016.02.015

Improved solar cell performance of Cu₂ZnSnS₄ (CZTS) thin films prepared by sulfurizing stacked precursor thin films via SILAR method

M. P. Suryawanshi
, Seung Wook Shin
, U. V. Ghorpade
, K. V. Gurav
, C. W. Hong
, P. S. Patil
, A. V. Moholkar
, Jin Hyeok Kim

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

This paper describes an approach to using the successive ionic adsorption and reaction (SILAR) method for the synthesis of Cu₂ZnSnS₄ (CZTS), a highly promising thin film absorber material. This approach involves the preparation of stacked precursor thin films of Cu₂SnS₃ and ZnS by using the SILAR method with different stacking orders, such as Mo/Cu₂SnS₃/ZnS (CZTS-A) and Mo/ZnS/Cu₂SnS₃ (CZTS-B). These stacked precursor films were sulfurized at 575°C for 1 h in a H₂S (5%) + N₂ (95%) atmosphere. The characteristics of the CZTS thin films prepared using stacked sulfide precursors are strongly dependent on the stacking orders in the precursor thin films. The influence of different precursor stacking orders on the structural, compositional, morphological and optical properties as well as the photoelectrochemical (PEC) performance of the CZTS thin films were studied. The best PEC performance of 1.81% was obtained with a maximum J_sc of 11.68 mA/cm², V_oc of 0.42 V and FF of 0.37 for the CZTS thin films based on the stacking order of Mo/ZnS/Cu₂SnS₃.

Original language	English (US)
Pages (from-to)	509-516
Number of pages	8
Journal	Journal of Alloys and Compounds
Volume	671
DOIs	https://doi.org/10.1016/j.jallcom.2016.02.015
State	Published - Jun 25 2016

Bibliographical note

Funding Information:
This work is supported by the Human Resources Development Program (No. 20124010203180 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy .

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Chemical synthesis
CuZnSnS (CZTS)
SEM
Solar cells
Stacking orders effect

Publisher link

10.1016/j.jallcom.2016.02.015

Find It

Find It at U of M Libraries

Cite this

@article{a5c3dbae824f41738c1e9509bdeddc10,

title = "Improved solar cell performance of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurizing stacked precursor thin films via SILAR method",

abstract = "This paper describes an approach to using the successive ionic adsorption and reaction (SILAR) method for the synthesis of Cu2ZnSnS4 (CZTS), a highly promising thin film absorber material. This approach involves the preparation of stacked precursor thin films of Cu2SnS3 and ZnS by using the SILAR method with different stacking orders, such as Mo/Cu2SnS3/ZnS (CZTS-A) and Mo/ZnS/Cu2SnS3 (CZTS-B). These stacked precursor films were sulfurized at 575°C for 1 h in a H2S (5\%) + N2 (95\%) atmosphere. The characteristics of the CZTS thin films prepared using stacked sulfide precursors are strongly dependent on the stacking orders in the precursor thin films. The influence of different precursor stacking orders on the structural, compositional, morphological and optical properties as well as the photoelectrochemical (PEC) performance of the CZTS thin films were studied. The best PEC performance of 1.81\% was obtained with a maximum Jsc of 11.68 mA/cm2, Voc of 0.42 V and FF of 0.37 for the CZTS thin films based on the stacking order of Mo/ZnS/Cu2SnS3.",

keywords = "Chemical synthesis, CuZnSnS (CZTS), SEM, Solar cells, Stacking orders effect",

author = "Suryawanshi, \{M. P.\} and Shin, \{Seung Wook\} and Ghorpade, \{U. V.\} and Gurav, \{K. V.\} and Hong, \{C. W.\} and Patil, \{P. S.\} and Moholkar, \{A. V.\} and Kim, \{Jin Hyeok\}",

note = "Funding Information: This work is supported by the Human Resources Development Program (No. 20124010203180 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.",

year = "2016",

month = jun,

day = "25",

doi = "10.1016/j.jallcom.2016.02.015",

language = "English (US)",

volume = "671",

pages = "509--516",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Improved solar cell performance of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurizing stacked precursor thin films via SILAR method

AU - Suryawanshi, M. P.

AU - Shin, Seung Wook

AU - Ghorpade, U. V.

AU - Gurav, K. V.

AU - Hong, C. W.

AU - Patil, P. S.

AU - Moholkar, A. V.

AU - Kim, Jin Hyeok

N1 - Funding Information: This work is supported by the Human Resources Development Program (No. 20124010203180 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.

PY - 2016/6/25

Y1 - 2016/6/25

N2 - This paper describes an approach to using the successive ionic adsorption and reaction (SILAR) method for the synthesis of Cu2ZnSnS4 (CZTS), a highly promising thin film absorber material. This approach involves the preparation of stacked precursor thin films of Cu2SnS3 and ZnS by using the SILAR method with different stacking orders, such as Mo/Cu2SnS3/ZnS (CZTS-A) and Mo/ZnS/Cu2SnS3 (CZTS-B). These stacked precursor films were sulfurized at 575°C for 1 h in a H2S (5%) + N2 (95%) atmosphere. The characteristics of the CZTS thin films prepared using stacked sulfide precursors are strongly dependent on the stacking orders in the precursor thin films. The influence of different precursor stacking orders on the structural, compositional, morphological and optical properties as well as the photoelectrochemical (PEC) performance of the CZTS thin films were studied. The best PEC performance of 1.81% was obtained with a maximum Jsc of 11.68 mA/cm2, Voc of 0.42 V and FF of 0.37 for the CZTS thin films based on the stacking order of Mo/ZnS/Cu2SnS3.

AB - This paper describes an approach to using the successive ionic adsorption and reaction (SILAR) method for the synthesis of Cu2ZnSnS4 (CZTS), a highly promising thin film absorber material. This approach involves the preparation of stacked precursor thin films of Cu2SnS3 and ZnS by using the SILAR method with different stacking orders, such as Mo/Cu2SnS3/ZnS (CZTS-A) and Mo/ZnS/Cu2SnS3 (CZTS-B). These stacked precursor films were sulfurized at 575°C for 1 h in a H2S (5%) + N2 (95%) atmosphere. The characteristics of the CZTS thin films prepared using stacked sulfide precursors are strongly dependent on the stacking orders in the precursor thin films. The influence of different precursor stacking orders on the structural, compositional, morphological and optical properties as well as the photoelectrochemical (PEC) performance of the CZTS thin films were studied. The best PEC performance of 1.81% was obtained with a maximum Jsc of 11.68 mA/cm2, Voc of 0.42 V and FF of 0.37 for the CZTS thin films based on the stacking order of Mo/ZnS/Cu2SnS3.

KW - Chemical synthesis

KW - CuZnSnS (CZTS)

KW - SEM

KW - Solar cells

KW - Stacking orders effect

UR - https://www.scopus.com/pages/publications/84959017854

UR - https://www.scopus.com/pages/publications/84959017854#tab=citedBy

U2 - 10.1016/j.jallcom.2016.02.015

DO - 10.1016/j.jallcom.2016.02.015

M3 - Article

AN - SCOPUS:84959017854

SN - 0925-8388

VL - 671

SP - 509

EP - 516

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -