A promising successive ionic layer adsorption and reaction (SILAR) method with a modified sequence has been designed and developed to deposit CZTS thin films with high absorbing characteristics. The influence of copper concentration in the precursor solution on the structural, compositional, morphological and optical properties and on the photoelectrochemical performance of the CZTS thin films has been investigated. The copper concentration in the precursor solution was varied from 0.02 to 0.008 M in 0.004 M intervals with constant Zn/Sn ratio. The films deposited using the optimized copper concentration of 0.012 M exhibit a prominent CZTS phase with a Cu-poor and Zn-rich composition, a dense microstructure and optical band gap energy of 1.43 eV. The device based on a Cu-poor (0.012 M) CZTS absorber layer exhibits the highest current density of 15.23 mA/cm2 with a power conversion efficiency of 3.81%.
|Original language||English (US)|
|Number of pages||10|
|State||Published - Dec 20 2014|
Bibliographical noteFunding Information:
This work was supported by the Human Resources Development Program (No. 20124010203180) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy and supported partially by the University Grant Commission (UGC), New Delhi, through major research project F. No. 41-945/2012 (SR).
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