Improved photoelectrochemical performance of Cu2ZnSnS4 (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence

M. P. Suryawanshi; S. W. Shin; U. V. Ghorpade; K. V. Gurav; C. W. Hong; G. L. Agawane; S. A. Vanalakar; J. H. Moon; Jae Ho Yun; P. S. Patil; Jin Hyeok Kim; A. V. Moholkar

doi:10.1016/j.electacta.2014.10.124

Improved photoelectrochemical performance of Cu₂ZnSnS₄ (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence

M. P. Suryawanshi, S. W. Shin, U. V. Ghorpade, K. V. Gurav, C. W. Hong, G. L. Agawane, S. A. Vanalakar, J. H. Moon, Jae Ho Yun, P. S. Patil, Jin Hyeok Kim, A. V. Moholkar

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A promising successive ionic layer adsorption and reaction (SILAR) method with a modified sequence has been designed and developed to deposit CZTS thin films with high absorbing characteristics. The influence of copper concentration in the precursor solution on the structural, compositional, morphological and optical properties and on the photoelectrochemical performance of the CZTS thin films has been investigated. The copper concentration in the precursor solution was varied from 0.02 to 0.008 M in 0.004 M intervals with constant Zn/Sn ratio. The films deposited using the optimized copper concentration of 0.012 M exhibit a prominent CZTS phase with a Cu-poor and Zn-rich composition, a dense microstructure and optical band gap energy of 1.43 eV. The device based on a Cu-poor (0.012 M) CZTS absorber layer exhibits the highest current density of 15.23 mA/cm² with a power conversion efficiency of 3.81%.

Original language	English (US)
Pages (from-to)	136-145
Number of pages	10
Journal	Electrochimica Acta
Volume	150
DOIs	https://doi.org/10.1016/j.electacta.2014.10.124
State	Published - Dec 20 2014

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development Program (No. 20124010203180) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy and supported partially by the University Grant Commission (UGC), New Delhi, through major research project F. No. 41-945/2012 (SR).

Publisher Copyright:
© 2014, Elsevier Ltd. All rights reserved.

Publisher link

10.1016/j.electacta.2014.10.124

Find It

Find It at U of M Libraries

Cite this

Suryawanshi, M. P., Shin, S. W., Ghorpade, U. V., Gurav, K. V., Hong, C. W., Agawane, G. L., Vanalakar, S. A., Moon, J. H., Yun, J. H., Patil, P. S., Kim, J. H., & Moholkar, A. V. (2014). Improved photoelectrochemical performance of Cu₂ZnSnS₄ (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence. Electrochimica Acta, 150, 136-145. https://doi.org/10.1016/j.electacta.2014.10.124

Suryawanshi, MP, Shin, SW, Ghorpade, UV, Gurav, KV, Hong, CW, Agawane, GL, Vanalakar, SA, Moon, JH, Yun, JH, Patil, PS, Kim, JH & Moholkar, AV 2014, 'Improved photoelectrochemical performance of Cu₂ZnSnS₄ (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence', Electrochimica Acta, vol. 150, pp. 136-145. https://doi.org/10.1016/j.electacta.2014.10.124

@article{6a46dcc0dee1402492361d818e562e61,

title = "Improved photoelectrochemical performance of Cu2ZnSnS4 (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence",

abstract = "A promising successive ionic layer adsorption and reaction (SILAR) method with a modified sequence has been designed and developed to deposit CZTS thin films with high absorbing characteristics. The influence of copper concentration in the precursor solution on the structural, compositional, morphological and optical properties and on the photoelectrochemical performance of the CZTS thin films has been investigated. The copper concentration in the precursor solution was varied from 0.02 to 0.008 M in 0.004 M intervals with constant Zn/Sn ratio. The films deposited using the optimized copper concentration of 0.012 M exhibit a prominent CZTS phase with a Cu-poor and Zn-rich composition, a dense microstructure and optical band gap energy of 1.43 eV. The device based on a Cu-poor (0.012 M) CZTS absorber layer exhibits the highest current density of 15.23 mA/cm2 with a power conversion efficiency of 3.81%.",

author = "Suryawanshi, {M. P.} and Shin, {S. W.} and Ghorpade, {U. V.} and Gurav, {K. V.} and Hong, {C. W.} and Agawane, {G. L.} and Vanalakar, {S. A.} and Moon, {J. H.} and Yun, {Jae Ho} and Patil, {P. S.} and Kim, {Jin Hyeok} and Moholkar, {A. V.}",

note = "Funding Information: This work was supported by the Human Resources Development Program (No. 20124010203180) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy and supported partially by the University Grant Commission (UGC), New Delhi, through major research project F. No. 41-945/2012 (SR). Publisher Copyright: {\textcopyright} 2014, Elsevier Ltd. All rights reserved.",

year = "2014",

month = dec,

day = "20",

doi = "10.1016/j.electacta.2014.10.124",

language = "English (US)",

volume = "150",

pages = "136--145",

journal = "Electrochimica Acta",

issn = "0013-4686",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Improved photoelectrochemical performance of Cu2ZnSnS4 (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence

AU - Suryawanshi, M. P.

AU - Shin, S. W.

AU - Ghorpade, U. V.

AU - Gurav, K. V.

AU - Hong, C. W.

AU - Agawane, G. L.

AU - Vanalakar, S. A.

AU - Moon, J. H.

AU - Yun, Jae Ho

AU - Patil, P. S.

AU - Kim, Jin Hyeok

AU - Moholkar, A. V.

N1 - Funding Information: This work was supported by the Human Resources Development Program (No. 20124010203180) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Ministry of Trade, Industry and Energy and supported partially by the University Grant Commission (UGC), New Delhi, through major research project F. No. 41-945/2012 (SR). Publisher Copyright: © 2014, Elsevier Ltd. All rights reserved.

PY - 2014/12/20

Y1 - 2014/12/20

N2 - A promising successive ionic layer adsorption and reaction (SILAR) method with a modified sequence has been designed and developed to deposit CZTS thin films with high absorbing characteristics. The influence of copper concentration in the precursor solution on the structural, compositional, morphological and optical properties and on the photoelectrochemical performance of the CZTS thin films has been investigated. The copper concentration in the precursor solution was varied from 0.02 to 0.008 M in 0.004 M intervals with constant Zn/Sn ratio. The films deposited using the optimized copper concentration of 0.012 M exhibit a prominent CZTS phase with a Cu-poor and Zn-rich composition, a dense microstructure and optical band gap energy of 1.43 eV. The device based on a Cu-poor (0.012 M) CZTS absorber layer exhibits the highest current density of 15.23 mA/cm2 with a power conversion efficiency of 3.81%.

AB - A promising successive ionic layer adsorption and reaction (SILAR) method with a modified sequence has been designed and developed to deposit CZTS thin films with high absorbing characteristics. The influence of copper concentration in the precursor solution on the structural, compositional, morphological and optical properties and on the photoelectrochemical performance of the CZTS thin films has been investigated. The copper concentration in the precursor solution was varied from 0.02 to 0.008 M in 0.004 M intervals with constant Zn/Sn ratio. The films deposited using the optimized copper concentration of 0.012 M exhibit a prominent CZTS phase with a Cu-poor and Zn-rich composition, a dense microstructure and optical band gap energy of 1.43 eV. The device based on a Cu-poor (0.012 M) CZTS absorber layer exhibits the highest current density of 15.23 mA/cm2 with a power conversion efficiency of 3.81%.

UR - http://www.scopus.com/inward/record.url?scp=84910005962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84910005962&partnerID=8YFLogxK

U2 - 10.1016/j.electacta.2014.10.124

DO - 10.1016/j.electacta.2014.10.124

M3 - Article

AN - SCOPUS:84910005962

SN - 0013-4686

VL - 150

SP - 136

EP - 145

JO - Electrochimica Acta

JF - Electrochimica Acta

ER -