Improved photoelectrochemical performance of Cu2ZnSnS4 (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence

M. P. Suryawanshi, S. W. Shin, U. V. Ghorpade, K. V. Gurav, C. W. Hong, G. L. Agawane, S. A. Vanalakar, J. H. Moon, Jae Ho Yun, P. S. Patil, Jin Hyeok Kim, A. V. Moholkar

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Abstract

A promising successive ionic layer adsorption and reaction (SILAR) method with a modified sequence has been designed and developed to deposit CZTS thin films with high absorbing characteristics. The influence of copper concentration in the precursor solution on the structural, compositional, morphological and optical properties and on the photoelectrochemical performance of the CZTS thin films has been investigated. The copper concentration in the precursor solution was varied from 0.02 to 0.008 M in 0.004 M intervals with constant Zn/Sn ratio. The films deposited using the optimized copper concentration of 0.012 M exhibit a prominent CZTS phase with a Cu-poor and Zn-rich composition, a dense microstructure and optical band gap energy of 1.43 eV. The device based on a Cu-poor (0.012 M) CZTS absorber layer exhibits the highest current density of 15.23 mA/cm2 with a power conversion efficiency of 3.81%.

Original languageEnglish (US)
Pages (from-to)136-145
Number of pages10
JournalElectrochimica Acta
Volume150
DOIs
StatePublished - Dec 20 2014

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© 2014, Elsevier Ltd. All rights reserved.

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