Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping'. Together they form a unique fingerprint.

Keyphrases

Engineering

Material Science