Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The dc and RF characteristics of Si/SiGe n-MODFETs with buried p-well doping incorporated by ion implantation are reported. At a drain-to-source biasVds of +1 V devices with 140-nm gate length had peak transconductance gm of 450 mS/mm, and maximum dc voltage gain Av of 20. These devices also had "off-state" drain current Ioff of 0.15 mA/mm at Vg = -0.5 V. Control devices without p-well doping had Av = 8.1 and Ioff = 13 mA/mm under the same bias conditions. MODFETs with p-well doping had fT as high as 72 GHz at Vds = +1.2 V. These devices also achieved fT of 30 GHz at a drain current, Id, of only 9.8 mA/mm, compared to Id = 30 mA/mm for previously published MODFETs with no p-well doping and similar peak fT.

Original languageEnglish (US)
Pages (from-to)817-819
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number11
DOIs
StatePublished - Nov 2005

Bibliographical note

Funding Information:
Manuscript received July 18, 2005; revised August 26, 2005. This work was supported by Defense Advanced Research Projects Agency (DARPA) under Contract N66001-00-C-8086. The review of this letter was arranged by Editor A. Chatterjee. The authors are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: skoester@us.ibm.com). Digital Object Identifier 10.1109/LED.2005.858103

Keywords

  • High mobility
  • MODFET
  • Silicon germanium

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