Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

S. J. Koester; K. L. Saenger; J. O. Chu; Q. C. Ouyang; J. A. Ott; D. F. Canaperi; J. A. Tornello; C. V. Jahnes

doi:10.1109/LED.2005.858103

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes

Electrical and Computer Engineering

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Abstract

The dc and RF characteristics of Si/SiGe n-MODFETs with buried p-well doping incorporated by ion implantation are reported. At a drain-to-source biasV_ds of +1 V devices with 140-nm gate length had peak transconductance g_m of 450 mS/mm, and maximum dc voltage gain A_v of 20. These devices also had "off-state" drain current I_off of 0.15 mA/mm at V_g = -0.5 V. Control devices without p-well doping had A_v = 8.1 and I_off = 13 mA/mm under the same bias conditions. MODFETs with p-well doping had f_T as high as 72 GHz at V_ds = +1.2 V. These devices also achieved f_T of 30 GHz at a drain current, I_d, of only 9.8 mA/mm, compared to I_d = 30 mA/mm for previously published MODFETs with no p-well doping and similar peak f_T.

Original language	English (US)
Pages (from-to)	817-819
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	11
DOIs	https://doi.org/10.1109/LED.2005.858103
State	Published - Nov 2005

Bibliographical note

Funding Information:
Manuscript received July 18, 2005; revised August 26, 2005. This work was supported by Defense Advanced Research Projects Agency (DARPA) under Contract N66001-00-C-8086. The review of this letter was arranged by Editor A. Chatterjee. The authors are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2005.858103

Keywords

High mobility
MODFET
Silicon germanium

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10.1109/LED.2005.858103

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title = "Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping",

abstract = "The dc and RF characteristics of Si/SiGe n-MODFETs with buried p-well doping incorporated by ion implantation are reported. At a drain-to-source biasVds of +1 V devices with 140-nm gate length had peak transconductance gm of 450 mS/mm, and maximum dc voltage gain Av of 20. These devices also had {"}off-state{"} drain current Ioff of 0.15 mA/mm at Vg = -0.5 V. Control devices without p-well doping had Av = 8.1 and Ioff = 13 mA/mm under the same bias conditions. MODFETs with p-well doping had fT as high as 72 GHz at Vds = +1.2 V. These devices also achieved fT of 30 GHz at a drain current, Id, of only 9.8 mA/mm, compared to Id = 30 mA/mm for previously published MODFETs with no p-well doping and similar peak fT.",

keywords = "High mobility, MODFET, Silicon germanium",

author = "Koester, {S. J.} and Saenger, {K. L.} and Chu, {J. O.} and Ouyang, {Q. C.} and Ott, {J. A.} and Canaperi, {D. F.} and Tornello, {J. A.} and Jahnes, {C. V.}",

note = "Funding Information: Manuscript received July 18, 2005; revised August 26, 2005. This work was supported by Defense Advanced Research Projects Agency (DARPA) under Contract N66001-00-C-8086. The review of this letter was arranged by Editor A. Chatterjee. The authors are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2005.858103",

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AU - Saenger, K. L.

AU - Chu, J. O.

AU - Ouyang, Q. C.

AU - Ott, J. A.

AU - Canaperi, D. F.

AU - Tornello, J. A.

AU - Jahnes, C. V.

N1 - Funding Information: Manuscript received July 18, 2005; revised August 26, 2005. This work was supported by Defense Advanced Research Projects Agency (DARPA) under Contract N66001-00-C-8086. The review of this letter was arranged by Editor A. Chatterjee. The authors are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2005.858103

PY - 2005/11

Y1 - 2005/11

N2 - The dc and RF characteristics of Si/SiGe n-MODFETs with buried p-well doping incorporated by ion implantation are reported. At a drain-to-source biasVds of +1 V devices with 140-nm gate length had peak transconductance gm of 450 mS/mm, and maximum dc voltage gain Av of 20. These devices also had "off-state" drain current Ioff of 0.15 mA/mm at Vg = -0.5 V. Control devices without p-well doping had Av = 8.1 and Ioff = 13 mA/mm under the same bias conditions. MODFETs with p-well doping had fT as high as 72 GHz at Vds = +1.2 V. These devices also achieved fT of 30 GHz at a drain current, Id, of only 9.8 mA/mm, compared to Id = 30 mA/mm for previously published MODFETs with no p-well doping and similar peak fT.

AB - The dc and RF characteristics of Si/SiGe n-MODFETs with buried p-well doping incorporated by ion implantation are reported. At a drain-to-source biasVds of +1 V devices with 140-nm gate length had peak transconductance gm of 450 mS/mm, and maximum dc voltage gain Av of 20. These devices also had "off-state" drain current Ioff of 0.15 mA/mm at Vg = -0.5 V. Control devices without p-well doping had Av = 8.1 and Ioff = 13 mA/mm under the same bias conditions. MODFETs with p-well doping had fT as high as 72 GHz at Vds = +1.2 V. These devices also achieved fT of 30 GHz at a drain current, Id, of only 9.8 mA/mm, compared to Id = 30 mA/mm for previously published MODFETs with no p-well doping and similar peak fT.

KW - High mobility

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KW - Silicon germanium

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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

Abstract

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