Abstract
The asymmetry of the switching current in magnetic tunneling junction (MTJ) and giant magnetoresistance (GMR) spin torque transfer devices was reported in both theory and experiment. This is one of the key challenges for future magnetic random access memory applications. In this work, the switching symmetry was greatly improved by inserting a nano-current-channel (NCC) structure in both MTJ and GMR devices. With the NCC structure, the current induced magnetization switching is nonuniform with initiation cites induced by locally high current density. The critical switching current density in both switching directions was successfully reduced while the degree of switching asymmetry { [(Jc P-AP - Jc AP-P) Jc AP-P] ×100%} was improved as well.
Original language | English (US) |
---|---|
Article number | 07A717 |
Journal | Journal of Applied Physics |
Volume | 103 |
Issue number | 7 |
DOIs | |
State | Published - 2008 |
Bibliographical note
Funding Information:This work was supported by the National Science Foundation under Award No. NER-0609023 and ECCS-0702264. The authors thank the support from Nano Fabrication Centre (NFC) and Characterization Facility in the University of Minnesota.