Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition
Sung Hyun Park, Daeyoung Moon, Bumho Kim, Kisu Joo, Duck Jae You, Dong Uk Kim, Hojun Chang, Heonsu Jeon, Yasushi Nanishi, Euijoon Yoon
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