Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs

Q. Ouyang, S. J. Koester, J. O. Chu, K. L. Saenger, J. A. Ott, K. A. Jenkins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of gate structure design on RF performance of strained-Si/SiGe nMODFETs are studied using device simulation and experiments. It is found that while gate resistance only affects fmax, fringing gate capacitance can have a significant impact on both fT and fmax, indicating that the physical gate structure has to be optimized for any specific application. The experiments suggest that low-ic material is needed as sidewall spacer (if any) and passivation for reducing fringing gate capacitance. Furthermore, the simulations show that if low gate resistance can be achieved by using a multi-finger geometry, a rectangular-shaped gate should be used in order to reduce fringing gate capacitance. If not, a T-gate should be used to reduce gate resistance for high fmax.

Original languageEnglish (US)
Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages203-206
Number of pages4
ISBN (Electronic)0780378261
DOIs
StatePublished - 2003
Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
Duration: Sep 3 2003Sep 5 2003

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2003-January

Other

Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/TerritoryUnited States
CityBoston
Period9/3/039/5/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

  • CMOS technology
  • Capacitance
  • Etching
  • Germanium silicon alloys
  • HEMTs
  • Immune system
  • MODFETs
  • Passivation
  • Radio frequency
  • Silicon germanium

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