TY - JOUR
T1 - Imperfect oriented attachment
T2 - Dislocation generation in defect-free nanocrystals
AU - Penn, R. Lee
AU - Banfield, Jillian F.
PY - 1998/8/14
Y1 - 1998/8/14
N2 - Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.
AB - Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.
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U2 - 10.1126/science.281.5379.969
DO - 10.1126/science.281.5379.969
M3 - Article
AN - SCOPUS:0032516657
SN - 0036-8075
VL - 281
SP - 969
EP - 971
JO - Science
JF - Science
IS - 5379
ER -