Impedance of GaAs p-i-n diodes.

A. Gopinath

Impedance of GaAs p-i-n diodes.

A. Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10^-7s.

Original language	English (US)
Pages (from-to)	801-802
Number of pages	2
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1988
State	Published - 1988

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title = "Impedance of GaAs p-i-n diodes.",

abstract = "A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10-7s.",

author = "A. Gopinath",

year = "1988",

language = "English (US)",

volume = "1988",

pages = "801--802",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Impedance of GaAs p-i-n diodes.

AU - Gopinath, A.

PY - 1988

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N2 - A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10-7s.

AB - A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10-7s.

UR - https://www.scopus.com/pages/publications/0024127931

UR - https://www.scopus.com/pages/publications/0024127931#tab=citedBy

M3 - Conference article

AN - SCOPUS:0024127931

SN - 0149-645X

VL - 1988

SP - 801

EP - 802

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

ER -

Impedance of GaAs p-i-n diodes.

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