A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10-7s.
|Original language||English (US)|
|Number of pages||2|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - Dec 1 1988|