Abstract
A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10-7s.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 801-802 |
| Number of pages | 2 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 1988 |
| State | Published - Dec 1 1988 |