Impedance of GaAs p-i-n diodes.

Anand Gopinath

Research output: Contribution to journalConference articlepeer-review

Abstract

A computer model of GaAs p-i-n diodes shows that when the insulator-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggest that diodes now have i-layers with lifetimes of about 10-7s.

Original languageEnglish (US)
Pages (from-to)801-802
Number of pages2
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1988
StatePublished - Dec 1 1988

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