Impedance and Switching of GaAs p-i-n Diodes

Z. Abid; A. Gopinath

doi:10.1109/22.58698

Impedance and Switching of GaAs p-i-n Diodes

Z. Abid
, A. Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The impedance of GaAs p-i-n diodes under forward bias is modeled using the two-dimensional simulation program PISCES. The capacitance and resistance, representing the parallel equivalent circuit of the diode, are constant over a wide frequency range. The switching transient of the p-i-n diode is also modeled and it is found that switching time is determined by the sweep out time of the carriers and not by the carrier lifetime.

Original language	English (US)
Pages (from-to)	1526-1528
Number of pages	3
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	38
Issue number	10
DOIs	https://doi.org/10.1109/22.58698
State	Published - Oct 1990

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@article{3d8a4f2438774cc9b886148a8c2b92f2,

title = "Impedance and Switching of GaAs p-i-n Diodes",

abstract = "The impedance of GaAs p-i-n diodes under forward bias is modeled using the two-dimensional simulation program PISCES. The capacitance and resistance, representing the parallel equivalent circuit of the diode, are constant over a wide frequency range. The switching transient of the p-i-n diode is also modeled and it is found that switching time is determined by the sweep out time of the carriers and not by the carrier lifetime.",

author = "Z. Abid and A. Gopinath",

year = "1990",

month = oct,

doi = "10.1109/22.58698",

language = "English (US)",

volume = "38",

pages = "1526--1528",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Impedance and Switching of GaAs p-i-n Diodes

AU - Abid, Z.

AU - Gopinath, A.

PY - 1990/10

Y1 - 1990/10

N2 - The impedance of GaAs p-i-n diodes under forward bias is modeled using the two-dimensional simulation program PISCES. The capacitance and resistance, representing the parallel equivalent circuit of the diode, are constant over a wide frequency range. The switching transient of the p-i-n diode is also modeled and it is found that switching time is determined by the sweep out time of the carriers and not by the carrier lifetime.

AB - The impedance of GaAs p-i-n diodes under forward bias is modeled using the two-dimensional simulation program PISCES. The capacitance and resistance, representing the parallel equivalent circuit of the diode, are constant over a wide frequency range. The switching transient of the p-i-n diode is also modeled and it is found that switching time is determined by the sweep out time of the carriers and not by the carrier lifetime.

UR - https://www.scopus.com/pages/publications/0025502782

UR - https://www.scopus.com/pages/publications/0025502782#tab=citedBy

U2 - 10.1109/22.58698

DO - 10.1109/22.58698

M3 - Article

AN - SCOPUS:0025502782

SN - 0018-9480

VL - 38

SP - 1526

EP - 1528

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 10

ER -

Impedance and Switching of GaAs p-i-n Diodes

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