Abstract
The impedance of GaAs p-i-n diodes under forward bias is modeled using the two-dimensional simulation program PISCES. The capacitance and resistance, representing the parallel equivalent circuit of the diode, are constant over a wide frequency range. The switching transient of the p-i-n diode is also modeled and it is found that switching time is determined by the sweep out time of the carriers and not by the carrier lifetime.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1526-1528 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 38 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1990 |