Impact of metal gate work function on gate leakage of MOSFETs

Y. T. Hou, M. F. Li, Tony Low, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Introduction: Aggressive device scaling aggravates the problems of poly-Si gate depletion and boron penetration. Metal gate is thus exploited to replace poly-Si. Here we investigate the impact of metal gate work function φB on tunneling leakage current in MOSFETs.

Original languageEnglish (US)
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages154-155
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - Jan 1 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: Dec 10 2003Dec 12 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period12/10/0312/12/03

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