Impact of metal gate work function on gate leakage of MOSFETs

Y. T. Hou; M. F. Li; Tony Low; D. L. Kwong

doi:10.1109/ISDRS.2003.1272039

Impact of metal gate work function on gate leakage of MOSFETs

Y. T. Hou, M. F. Li, Tony Low, D. L. Kwong

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Introduction: Aggressive device scaling aggravates the problems of poly-Si gate depletion and boron penetration. Metal gate is thus exploited to replace poly-Si. Here we investigate the impact of metal gate work function φB on tunneling leakage current in MOSFETs.

Original language	English (US)
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	154-155
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272039
State	Published - 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: Dec 10 2003 → Dec 12 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

Other	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	12/10/03 → 12/12/03

Publisher link

10.1109/ISDRS.2003.1272039

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Hou, Y. T., Li, M. F., Low, T., & Kwong, D. L. (2003). Impact of metal gate work function on gate leakage of MOSFETs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 154-155). Article 1272039 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272039

Impact of metal gate work function on gate leakage of MOSFETs. / Hou, Y. T.; Li, M. F.; Low, Tony et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 154-155 1272039 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hou, YT, Li, MF, Low, T & Kwong, DL 2003, Impact of metal gate work function on gate leakage of MOSFETs. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272039, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 154-155, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 12/10/03. https://doi.org/10.1109/ISDRS.2003.1272039

Hou YT, Li MF, Low T, Kwong DL. Impact of metal gate work function on gate leakage of MOSFETs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 154-155. 1272039. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1272039

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title = "Impact of metal gate work function on gate leakage of MOSFETs",

abstract = "Introduction: Aggressive device scaling aggravates the problems of poly-Si gate depletion and boron penetration. Metal gate is thus exploited to replace poly-Si. Here we investigate the impact of metal gate work function φB on tunneling leakage current in MOSFETs.",

author = "Hou, {Y. T.} and Li, {M. F.} and Tony Low and Kwong, {D. L.}",

year = "2003",

doi = "10.1109/ISDRS.2003.1272039",

language = "English (US)",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

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AU - Low, Tony

AU - Kwong, D. L.

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Y1 - 2003

N2 - Introduction: Aggressive device scaling aggravates the problems of poly-Si gate depletion and boron penetration. Metal gate is thus exploited to replace poly-Si. Here we investigate the impact of metal gate work function φB on tunneling leakage current in MOSFETs.

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BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Impact of metal gate work function on gate leakage of MOSFETs

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