The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.
|Original language||English (US)|
|Title of host publication||European Solid-State Device Research Conference|
|Editors||Roberto Bez, Paolo Pavan, Gaudenzio Meneghesso|
|Publisher||IEEE Computer Society|
|Number of pages||4|
|State||Published - Nov 5 2014|
|Event||44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy|
Duration: Sep 22 2014 → Sep 26 2014
|Name||European Solid-State Device Research Conference|
|Other||44th European Solid-State Device Research Conference, ESSDERC 2014|
|Period||9/22/14 → 9/26/14|
Bibliographical notePublisher Copyright:
© 2014 IEEE.