IIIB-2 The Fabrication Submicrometer MOSFET's using Laser Doping

P. G. Carey; K. Bezjian; T. W. Simon; T. Magee; P. Gildea

doi:10.1109/T-ED.1986.22782

IIIB-2 The Fabrication Submicrometer MOSFET's using Laser Doping

P. G. Carey
, K. Bezjian
, T. W. Simon
, T. Magee
, P. Gildea

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1847
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	33
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1986.22782
State	Published - Nov 1986

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@article{ede6d815c1f542ddac2ffcd9b674e871,

title = "IIIB-2 The Fabrication Submicrometer MOSFET's using Laser Doping",

author = "Carey, \{P. G.\} and K. Bezjian and Simon, \{T. W.\} and T. Magee and P. Gildea",

year = "1986",

month = nov,

doi = "10.1109/T-ED.1986.22782",

language = "English (US)",

volume = "33",

pages = "1847",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - IIIB-2 The Fabrication Submicrometer MOSFET's using Laser Doping

AU - Carey, P. G.

AU - Bezjian, K.

AU - Simon, T. W.

AU - Magee, T.

AU - Gildea, P.

PY - 1986/11

Y1 - 1986/11

UR - https://www.scopus.com/pages/publications/0022806124

UR - https://www.scopus.com/pages/publications/0022806124#tab=citedBy

U2 - 10.1109/T-ED.1986.22782

DO - 10.1109/T-ED.1986.22782

M3 - Article

AN - SCOPUS:0022806124

SN - 0018-9383

VL - 33

SP - 1847

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

IIIB-2 The Fabrication Submicrometer MOSFET's using Laser Doping

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