IIIB-2 Quantum Well p-channel AlGaAs/InGaAs/GaAs Devices for Complementary Heterostructure FET Applications

P. P. Ruden, R. R. Daniels, M. S. Shur, D. Grider, T. Nohava, D. K. Arch, N. C. Cirillo

Research output: Contribution to journalArticlepeer-review

Original languageEnglish (US)
Pages (from-to)2440
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 1988

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The potential of complementary heterostructure FET’s for ultralow-power, high-speed digital circuit applications has been demonstrated by a number of groups [ 11-[3]. In particular, self-aligned gate heterostructure insulated gate FET’s (HIGFET’s) have shown a number of attributes that make them particularly suitable for complementary logic circuits [I], [2]. However, to date, the low extrinsic transconductance of the p-channel AlGaAs /GaAs HIGFET resulting from low hole mobility and high source series resistance [4] has limited the performance of these devices. We discuss the results of self-aligned gate p-channel heterostructure FET’s fabricated on an AlGaAs/InGaAs/GaAs strained quantum well structure. Transconductance, transconductance parameter, and maximum drain current as high as 113 mS/mm, 305 mS/V/mm, and 94 mA/mm were achieved in 0.8 pn devices at room temperature. At 77 K we obtained 181 mS/mm, 800 mS/V/mm, and 180 mA/mm in I-pm devices. The highest hole field effect mobilities deduced from the device data are 860 and 2815 cm’/V at room temperature and 77 K, respectively. We believe these device parameters to be the best reported to date. They are consistent with recent reports of enhanced hole mobility in strained quantum systems [5]. Our results suggest that a viable complementary heterostructure FET technology based on the AlGaAs/InGaAs/GaAs strained quantum well structure can be realized. We also discuss the suppression of short-channel effects with buried n-layers and we propose a new type of structure which promises enhanced performance due to a reduction of the gate leakage. This work was supported in part by AFWAL under Contract F33615-86-C-1130. N. C. Cirillo, Jr., M. Shur, P. Vold, J. Abrokwah, R. Daniels, and 0. Tufte, in IEDM Tech. Dig., 1985; R. R. Daniels, R. MacTaggart, J. Abrokwah, 0. Tufte, M. Shur, J. Baek, and P. Jenkins, in lEDM Tech. Dig., 1986. T. Mizutani, S. Fujita, and F. Yanagawa, Electron. Lett., vol. 21, p. 7, 1985. R. A. Kiehl, M. A. Scontras, D. J. Widiger, and W. M. Kwapien. IEEE Trans. Electron Devices, vol. ED-34, p. 2412. 1987. C. Lee, H. Wang, G. Sullivan, N. Sheng, and D. Miller, IEEE Elec-tron Device Lett., vol. EDL-8, p. 85, 1987. G. Osbourn, J. Schirber, T. Drurnmond, L. Dawson, B. Doyle, and I. Fritz, Appl. Phys. Lett., vol. 49, no. 12, 1986.

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