Hydrostatic-pressure dependence of organic thin-film transistor current versus voltage characteristics

Zhenlin Rang, Marshall I. Nathan, P. Paul Ruden, Reid Chesterfield, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


We report results of electrical output and transfer characteristics for two top-contact pentacene thin-film transistors under hydrostatic pressure at room temperature. Strong reversible increases of the drain current and the field-effect hole mobility with increasing pressure were observed, in particular for a device with relatively low current at atmospheric pressure.

Original languageEnglish (US)
Pages (from-to)5760-5762
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - Dec 6 2004

Bibliographical note

Funding Information:
This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302.

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