We report results of electrical output and transfer characteristics for two top-contact pentacene thin-film transistors under hydrostatic pressure at room temperature. Strong reversible increases of the drain current and the field-effect hole mobility with increasing pressure were observed, in particular for a device with relatively low current at atmospheric pressure.
Bibliographical noteFunding Information:
This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302.