Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions

T. J. Belich; S. Thompson; C. R. Perrey; U. Kortshagen; C. B. Carter; J. Kakalios

Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions

T. J. Belich, S. Thompson, C. R. Perrey, U. Kortshagen, C. B. Carter, J. Kakalios

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions (a/nc-Si:H) have been synthesized in an RF capacitively coupled PECVD system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the plasma. High resolution TEM confirms the presence of nanocrystallites as small as 2 nm in these films. Measurements of the optical absorption spectrum using CPM and PDS indicates a broadening of the Urbach slope in the a/nc-Si:H, compared to a-Si:H films, but no appreciable increase in midgap absorption. Despite the deposition conditions for the a/nc-Si:H being very different from those associated with producing optimal quality a-Si:H, the dark conductivity and photoconductivity values, and the sensitivity to light-induced defect creation in the a/nc-Si:H films are comparable to those in a-Si:H.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	J.R. Abelson, G. Ganguly, H. Matsumura, J. Robertson, E.A. Schiff
Pages	509-514
Number of pages	6
Volume	762
State	Published - 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

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Other	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003
Country/Territory	United States
City	San Francisco, CA
Period	4/22/03 → 4/25/03

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Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions. / Belich, T. J.; Thompson, S.; Perrey, C. R. et al.
Materials Research Society Symposium - Proceedings. ed. / J.R. Abelson; G. Ganguly; H. Matsumura; J. Robertson; E.A. Schiff. Vol. 762 2003. p. 509-514.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Belich, TJ, Thompson, S, Perrey, CR, Kortshagen, U, Carter, CB & Kakalios, J 2003, Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions. in JR Abelson, G Ganguly, H Matsumura, J Robertson & EA Schiff (eds), Materials Research Society Symposium - Proceedings. vol. 762, pp. 509-514, Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States, 4/22/03.

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title = "Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions",

abstract = "Thin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions (a/nc-Si:H) have been synthesized in an RF capacitively coupled PECVD system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the plasma. High resolution TEM confirms the presence of nanocrystallites as small as 2 nm in these films. Measurements of the optical absorption spectrum using CPM and PDS indicates a broadening of the Urbach slope in the a/nc-Si:H, compared to a-Si:H films, but no appreciable increase in midgap absorption. Despite the deposition conditions for the a/nc-Si:H being very different from those associated with producing optimal quality a-Si:H, the dark conductivity and photoconductivity values, and the sensitivity to light-induced defect creation in the a/nc-Si:H films are comparable to those in a-Si:H.",

author = "Belich, {T. J.} and S. Thompson and Perrey, {C. R.} and U. Kortshagen and Carter, {C. B.} and J. Kakalios",

year = "2003",

language = "English (US)",

volume = "762",

pages = "509--514",

editor = "J.R. Abelson and G. Ganguly and H. Matsumura and J. Robertson and E.A. Schiff",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

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T1 - Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions

AU - Belich, T. J.

AU - Thompson, S.

AU - Perrey, C. R.

AU - Kortshagen, U.

AU - Carter, C. B.

AU - Kakalios, J.

PY - 2003

Y1 - 2003

N2 - Thin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions (a/nc-Si:H) have been synthesized in an RF capacitively coupled PECVD system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the plasma. High resolution TEM confirms the presence of nanocrystallites as small as 2 nm in these films. Measurements of the optical absorption spectrum using CPM and PDS indicates a broadening of the Urbach slope in the a/nc-Si:H, compared to a-Si:H films, but no appreciable increase in midgap absorption. Despite the deposition conditions for the a/nc-Si:H being very different from those associated with producing optimal quality a-Si:H, the dark conductivity and photoconductivity values, and the sensitivity to light-induced defect creation in the a/nc-Si:H films are comparable to those in a-Si:H.

AB - Thin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions (a/nc-Si:H) have been synthesized in an RF capacitively coupled PECVD system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the plasma. High resolution TEM confirms the presence of nanocrystallites as small as 2 nm in these films. Measurements of the optical absorption spectrum using CPM and PDS indicates a broadening of the Urbach slope in the a/nc-Si:H, compared to a-Si:H films, but no appreciable increase in midgap absorption. Despite the deposition conditions for the a/nc-Si:H being very different from those associated with producing optimal quality a-Si:H, the dark conductivity and photoconductivity values, and the sensitivity to light-induced defect creation in the a/nc-Si:H films are comparable to those in a-Si:H.

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M3 - Conference contribution

AN - SCOPUS:1642438955

VL - 762

SP - 509

EP - 514

BT - Materials Research Society Symposium - Proceedings

A2 - Abelson, J.R.

A2 - Ganguly, G.

A2 - Matsumura, H.

A2 - Robertson, J.

A2 - Schiff, E.A.

T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003

Y2 - 22 April 2003 through 25 April 2003

ER -

Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Silicon Inclusions

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