TY - GEN
T1 - Hydrogenated amorphous silicon sensors based on thin film on ASIC technology
AU - Despeisse, M.
AU - Moraes, D.
AU - Anelli, G.
AU - Jarron, P.
AU - Kaplon, J.
AU - Rusack, R.
AU - Saramad, S.
AU - Wyrsch, N.
PY - 2005
Y1 - 2005
N2 - The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "Thin-Film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 104-105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre-amplifiers. The measurement set-up also permits to study the depletion of the sensor and results are presented. Finally, direct detection of 5.9 keV X-rays with TFA detectors based on an ASIC integrating low noise pre-amplifiers (27 e- r.m.s) are shown.
AB - The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "Thin-Film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 104-105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre-amplifiers. The measurement set-up also permits to study the depletion of the sensor and results are presented. Finally, direct detection of 5.9 keV X-rays with TFA detectors based on an ASIC integrating low noise pre-amplifiers (27 e- r.m.s) are shown.
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U2 - 10.1109/NSSMIC.2005.1596579
DO - 10.1109/NSSMIC.2005.1596579
M3 - Conference contribution
AN - SCOPUS:33846612620
SN - 0780392213
SN - 9780780392212
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 1389
EP - 1394
BT - 2005 IEEE Nuclear Science Symposium Conference Record -Nuclear Science Symposium and Medical Imaging Conference
T2 - Nuclear Science Symposium Conference Record, 2005 IEEE
Y2 - 23 October 2005 through 29 October 2005
ER -