Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

M. Despeisse, D. Moraes, G. Anelli, P. Jarron, J. Kaplon, R. Rusack, S. Saramad, N. Wyrsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "Thin-Film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 104-105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre-amplifiers. The measurement set-up also permits to study the depletion of the sensor and results are presented. Finally, direct detection of 5.9 keV X-rays with TFA detectors based on an ASIC integrating low noise pre-amplifiers (27 e- r.m.s) are shown.

Original languageEnglish (US)
Title of host publication2005 IEEE Nuclear Science Symposium Conference Record -Nuclear Science Symposium and Medical Imaging Conference
Pages1389-1394
Number of pages6
DOIs
StatePublished - 2005
EventNuclear Science Symposium Conference Record, 2005 IEEE - , Puerto Rico
Duration: Oct 23 2005Oct 29 2005

Publication series

NameIEEE Nuclear Science Symposium Conference Record
Volume3
ISSN (Print)1095-7863

Other

OtherNuclear Science Symposium Conference Record, 2005 IEEE
CountryPuerto Rico
Period10/23/0510/29/05

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