Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Sumit Agarwal, Bram Hoex, M. C M Van De Banden, Dimitrios Maraudas, Eray S. Aydil

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Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH 4 and SiD 4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D 2(H 2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm -1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm -1, respectively.

Original languageEnglish (US)
Pages (from-to)2719-2726
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - Nov 2004

Bibliographical note

Funding Information:
This work was supported by the NSF/DoE Partnership for Basic Plasma Science and Engineering (Award Nos. ECS-0078711, ECS-0317345, and ECS-0317459) and by the Camille and Henry Dreyfus Foundation through the Camille Dreyfus Teacher-Scholar award to D.M.

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