Hydrogen diffusion in doped and compensated a-Si:H has been measured by secondary-ion mass spectrometry profiling in the temperature range 155 300 C. Doping reduces the activation energy and enhances the diffusion coefficient by up to three orders of magnitude at 200°C, and a correlation between the diffusion coefficient and the dangling-bond density is found. An analysis of three different diffusion models indicates that the breaking of weak Si - Si bonds by hydrogen may be an important process. The relation between the diffusion results and the thermal equilibration of the electronic structure is discussed.
|Original language||English (US)|
|Number of pages||16|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - Sep 1987|