Hydrogen diffusion in amorphous silicon

R. A. Street, C. C. Tsai, J. Kakalios, W. B. Jackson

Research output: Contribution to journalArticlepeer-review

227 Scopus citations

Abstract

Hydrogen diffusion in doped and compensated a-Si:H has been measured by secondary-ion mass spectrometry profiling in the temperature range 155 300 C. Doping reduces the activation energy and enhances the diffusion coefficient by up to three orders of magnitude at 200°C, and a correlation between the diffusion coefficient and the dangling-bond density is found. An analysis of three different diffusion models indicates that the breaking of weak Si - Si bonds by hydrogen may be an important process. The relation between the diffusion results and the thermal equilibration of the electronic structure is discussed.

Original languageEnglish (US)
Pages (from-to)305-320
Number of pages16
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume56
Issue number3
DOIs
StatePublished - Sep 1987

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