Hybrid molecular beam epitaxy growth of BaTiO
              3
              films

William Nunn; Sara Sandlass; Maike Wegner; Ryan Haislmaier; Abinash Kumar; Malleswararao Tangi; James Lebeau; Eckhard Quandt; Richard D. James; Bharat Jalan

doi:10.1116/6.0001140

Hybrid molecular beam epitaxy growth of BaTiO 3 films

William Nunn, Sara Sandlass, Maike Wegner, Ryan Haislmaier, Abinash Kumar, Malleswararao Tangi, James Lebeau, Eckhard Quandt, Richard D. James, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The ability to reproducibly synthesize thin films with precise composition and controlled structure is essential for fundamental study and mass production. Here, we demonstrate the hybrid molecular beam epitaxy (MBE) growth of epitaxial, single crystalline BaTiO₃ films with different thicknesses on Nb-doped SrTiO₃ substrates with atomically smooth surfaces. By combining scanning transmission electron microscopy, temperature-dependent high-resolution x-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy, we study the effect of growth conditions and the interplay between stoichiometry and epitaxial strain on the resulting structure. Furthermore, we demonstrate a close to bulk-like ferroelectric phase transition in thicker films and highlight the effect of strain on the phase transition temperature. This work establishes the hybrid MBE approach for the growth of heteroepitaxial BaTiO₃ films on conducting substrates with scalable thickness and controlled stoichiometry.

Original language	English (US)
Article number	040404
Pages (from-to)	040404
Journal	Journal of Vacuum Science and Technology A
Volume	39
Issue number	4
DOIs	https://doi.org/10.1116/6.0001140
State	Published - Jul 1 2021

Bibliographical note

Funding Information:
This work was primarily supported by the U.S. Department of Energy under Grant No. DE-SC002021. The work also benefited from the Norwegian Centennial Chair Program (NOCC) and Vannevar Bush Faculty Fellowship. M.W. and E.Q. acknowledge funding from the Deutsche Forschungsgemeinschaft (DFG) through a Reinhart Koselleck Project (No. 313454214). J.L. and A.K. acknowledge support for this work from the National Science Foundation (No. DMR-1350273). A.K. acknowledges support from an MIT Mathworks Engineering Fellowship. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award No. DMR-2011401, as well as the Analytical Instrumentation Facility (AIF) at North Carolina State University, which is supported by the State of North Carolina and the National Science Foundation (No. ECCS-1542015). AIF is a member of the North Carolina Research Triangle Nanotechnology Network (RTNN), a site in the National Nanotechnology Coordinated Infrastructure (NNCI). The authors declare no competing interests.

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title = "Hybrid molecular beam epitaxy growth of BaTiO 3 films",

abstract = "The ability to reproducibly synthesize thin films with precise composition and controlled structure is essential for fundamental study and mass production. Here, we demonstrate the hybrid molecular beam epitaxy (MBE) growth of epitaxial, single crystalline BaTiO3 films with different thicknesses on Nb-doped SrTiO3 substrates with atomically smooth surfaces. By combining scanning transmission electron microscopy, temperature-dependent high-resolution x-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy, we study the effect of growth conditions and the interplay between stoichiometry and epitaxial strain on the resulting structure. Furthermore, we demonstrate a close to bulk-like ferroelectric phase transition in thicker films and highlight the effect of strain on the phase transition temperature. This work establishes the hybrid MBE approach for the growth of heteroepitaxial BaTiO3 films on conducting substrates with scalable thickness and controlled stoichiometry.",

author = "William Nunn and Sara Sandlass and Maike Wegner and Ryan Haislmaier and Abinash Kumar and Malleswararao Tangi and James Lebeau and Eckhard Quandt and James, {Richard D.} and Bharat Jalan",

note = "Funding Information: This work was primarily supported by the U.S. Department of Energy under Grant No. DE-SC002021. The work also benefited from the Norwegian Centennial Chair Program (NOCC) and Vannevar Bush Faculty Fellowship. M.W. and E.Q. acknowledge funding from the Deutsche Forschungsgemeinschaft (DFG) through a Reinhart Koselleck Project (No. 313454214). J.L. and A.K. acknowledge support for this work from the National Science Foundation (No. DMR-1350273). A.K. acknowledges support from an MIT Mathworks Engineering Fellowship. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award No. DMR-2011401, as well as the Analytical Instrumentation Facility (AIF) at North Carolina State University, which is supported by the State of North Carolina and the National Science Foundation (No. ECCS-1542015). AIF is a member of the North Carolina Research Triangle Nanotechnology Network (RTNN), a site in the National Nanotechnology Coordinated Infrastructure (NNCI). The authors declare no competing interests. Publisher Copyright: {\textcopyright} 2021 Author(s).",

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AU - Lebeau, James

AU - Quandt, Eckhard

AU - James, Richard D.

AU - Jalan, Bharat

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N2 - The ability to reproducibly synthesize thin films with precise composition and controlled structure is essential for fundamental study and mass production. Here, we demonstrate the hybrid molecular beam epitaxy (MBE) growth of epitaxial, single crystalline BaTiO3 films with different thicknesses on Nb-doped SrTiO3 substrates with atomically smooth surfaces. By combining scanning transmission electron microscopy, temperature-dependent high-resolution x-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy, we study the effect of growth conditions and the interplay between stoichiometry and epitaxial strain on the resulting structure. Furthermore, we demonstrate a close to bulk-like ferroelectric phase transition in thicker films and highlight the effect of strain on the phase transition temperature. This work establishes the hybrid MBE approach for the growth of heteroepitaxial BaTiO3 films on conducting substrates with scalable thickness and controlled stoichiometry.

AB - The ability to reproducibly synthesize thin films with precise composition and controlled structure is essential for fundamental study and mass production. Here, we demonstrate the hybrid molecular beam epitaxy (MBE) growth of epitaxial, single crystalline BaTiO3 films with different thicknesses on Nb-doped SrTiO3 substrates with atomically smooth surfaces. By combining scanning transmission electron microscopy, temperature-dependent high-resolution x-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy, we study the effect of growth conditions and the interplay between stoichiometry and epitaxial strain on the resulting structure. Furthermore, we demonstrate a close to bulk-like ferroelectric phase transition in thicker films and highlight the effect of strain on the phase transition temperature. This work establishes the hybrid MBE approach for the growth of heteroepitaxial BaTiO3 films on conducting substrates with scalable thickness and controlled stoichiometry.

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Hybrid molecular beam epitaxy growth of BaTiO 3 films

Abstract

Bibliographical note

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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

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Hybrid molecular beam epitaxy growth of BaTiO 3 films

Abstract

Bibliographical note

MRSEC Support

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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

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