Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3

Abhinav Prakash, John Dewey, Hwanhui Yun, Jong Seok Jeong, K. Andre Mkhoyan, Bharat Jalan

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Owing to its high roomerature electron mobility and wide bandgap, BaSnO3 has recently become of significant interest for potential roomerature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO3 films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO3 films were thus grown on SrTiO3 (001) and LaAlO3 (001) substrates. Growth conditions for stoichiometric BaSnO3 were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1nm for strain relaxation was determined for films grown on SrTiO3 using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO3.

Original languageEnglish (US)
Article number060608
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
StatePublished - Nov 1 2015

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